LOGO
LOGO
IPI030N10N3GXKSA1 Image

img for reference only

Mfr. #:
IPI030N10N3GXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 100A (Tc) 300W (Tc) PG-TO262-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 100 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 3 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 3.5 V @ 275 μA
Gate Charge?(Qg) (max) at Vgs 206 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 14800 pF @ 50 V
FET Function -
Power Dissipation (max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd