IPI037N08N3GXKSA1 Infineon | Infineon agency

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Mfr. #：

IPI037N08N3GXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 80 V 100A (Tc) 214W (Tc) PG-TO262-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	100 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6 V, 10 V
On-Resistance (max) at Id, Vgs	3.75 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id	3.5 V @ 155 μA
Gate Charge?(Qg) (max) at Vgs	117 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	8110 pF @ 40 V
FET Function	-
Power Dissipation (max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

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