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BUZ31H3046XKSA1 Image

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Mfr. #:
BUZ31H3046XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 200 V 14.5A (Tc) 95W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series SIPMOS?
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 14.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 5V
On-Resistance (max) at Id, Vgs 200 mOhm @ 9A, 5V
Vgs(th) (max) at Id 4V @ 1mA
Vgs (max) ±20V
Input Capacitance (Ciss) (max) at Vds 1120 pF @ 25 V
FET Function -
Power dissipation (max) 95W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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