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IGW60N60H3 Image

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Mfr. #:
IGW60N60H3
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type Trench field stop
Power (Pd) 416W
Collector-emitter breakdown voltage (Vces) 600V
Collector current (Ic) 80A
Collector pulse current (Icm) 180A
Collector cutoff current (Ices@Vce) 40uA@600V
Collector-emitter saturation voltage (VCE(sat)@Ic,Vge) 1.85V@60A,15V
Gate threshold voltage (Vge(th)@Ic) 5. 1V@1mA
Gate charge (Qg@Ic,Vge) 375nC@60A,15V
Input capacitance (Cies@Vce) 3.66nF@25V
Turn-on delay time (Td(on)) 27ns
Turn-off delay time (Td(off)) 252ns
Conduction loss (Eon) 2.1mJ
Turn-off loss (Eoff) 1.13mJ
Forward voltage drop (Vf@If) -
Reverse recovery time (Trr) -
Operating temperature -40℃~ 175℃@(Tj)
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