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AIGW50N65H5 Image

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Mfr. #:
AIGW50N65H5
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Power(Pd) 270W
Collector-Emitter Breakdown Voltage(Vces) 650V
Collector Current(Ic) 83A
Collector Pulse Current(Icm) 150A
Collector Cutoff Current(Ices@Vce) 40uA@650V
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Vge) 1.66V@50A,15V
Gate Threshold Voltage(Vge(th)@Ic) 4V@5 00uA
Gate charge (Qg@Ic,Vge) 116nC@50A,15V
Input capacitance (Cies@Vce) 2.8nF@25V
Turn-on delay time (Td(on)) 21ns
Turn-off delay time (Td(off)) 173ns
Conduction loss (Eon) 0.45mJ
Turn-off loss (Eoff) 0.16mJ
Forward voltage drop (Vf@If) -
Reverse recovery time (Trr) -
Operating temperature -40℃~ 175℃@(Tj)
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