IPD50R800CEATMA1 Infineon | Infineon agency

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Mfr. #：

IPD50R800CEATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 500 V 5A (Tc) 60W (Tc) PG-TO252-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? CE
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	500 V
Current at 25°C - Continuous Drain (Id)	5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	13V
On-Resistance (max) at Id, Vgs	800 mOhm @ 1.5A, 13V
Vgs(th) (max) at Id	3.5V @ 130μA
Gate Charge?(Qg) (max) at Vgs	12.4 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	280 pF @ 100 V
FET function	-
Power dissipation (max)	60W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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