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FP25R12W1T7 Image

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Mfr. #:
FP25R12W1T7
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type IGBT module
Power (Pd) -
Collector-emitter breakdown voltage (Vces) 1.2kV
Collector current (Ic) 25A
Collector pulse current (Icm) 50A
Collector cutoff current (Ices@Vce) 5.6uA@1.2kV
Collector-emitter saturation voltage (VCE(sat)@Ic,Vge) 1.6V@25A,15V
Gate threshold voltage (Vge(th)@Ic) 5. 8V@500uA
Gate charge (Qg@Ic,Vge) -
Input capacitance (Cies@Vce) 4.77nF@25V
Turn-on delay time (Td(on)) 37ns
Turn-off delay time (Td(off)) 200ns
Conduction loss (Eon) 1.55mJ
Turn-off loss (Eoff) 2.1mJ
Forward voltage drop (Vf@If) 1.83V@25A
Reverse recovery time (Trr) -
Operating temperature -40℃~ 175℃@(Tvjop)
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