LOGO
LOGO
IRF3707ZSTRLPBF Image

img for reference only

Mfr. #:
IRF3707ZSTRLPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 30 V 59A (Tc) 57W (Tc) D2PAK
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?, StrongIRFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 59A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) @ Id, Vgs 9.5 milliohms @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Gate Charge?(Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1210 pF @ 15 V
FET function -
Power dissipation (max) 57W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package D2PAK
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
Related models
  • IPF024N10NF2SATMA1

    Infineon N-channel MOSFET, Vds=100 V, 227 A, PG-TO263-7, SMD Mount

  • IMZ120R060M1HXKSA1

    Infineon MOS tube, Vds=1200 V, PG-TO247-4, SMD installation, IMZ120R060M1HXKSA1

  • IPT014N08NM5ATMA1

    Infineon IPT014N08NM5ATMA1

  • IAUC41N06S5L100ATMA1

    Infineon N-channel MOS tube, Vds=60 V, 41 A, PG-TDSON, SMD installation

  • IRF2804STRLPBF

    Infineon N-channel MOS tube, Vds=40 V, 270 A, TO-262, through-hole mounting, IRF2804STRLPBF

  • IRFB7434PBF

    Infineon N-channel MOS tube, Vds=40 V, 317 A, TO-220AB, through-hole mounting, IRFB7434PBF

  • IPP60R040S7XKSA1

    Infineon N-channel MOSFET, Vds=600 V, 13 A, TO-220, through-hole mounting

  • IAUC120N04S6N010ATMA1

    Infineon N-channel MOS tube, Vds=40 V, 120 A, PG-TDSON, SMD installation

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd