IPP030N10N3GHKSA1 Infineon | Infineon agency

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Mfr. #：

IPP030N10N3GHKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 100A (Tc) 300W (Tc) PG-TO220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	100 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6 V, 10 V
On-Resistance (max) at Id, Vgs	3 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id	3.5 V @ 275 μA
Gate Charge?(Qg) (max) at Vgs	206 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	14800 pF @ 50 V
FET Function	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package/Case	TO-220-3

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