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IPB60R230P6ATMA1 Image

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Mfr. #:
IPB60R230P6ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 600 V 16.8A (Tc) 126W (Tc) PG-TO263-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P6
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 16.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 230 mOhm @ 6.4A, 10V
Vgs(th) (max) at Id 4.5V @ 530μA
Gate Charge?(Qg) (max) at Vgs 31 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1450 pF @ 100 V
FET function -
Power dissipation (max) 126W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3-1
Package/case TO-263-4, D2Pak (3-lead tab), TO-263AA
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