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IPA50R650CEXKSA2 Image

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Mfr. #:
IPA50R650CEXKSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 500 V 4.6A (Tc) 27.2W (Tc) PG-TO220-3-FP
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CE
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 4.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 13V
On-Resistance (max) at Id, Vgs 650 mOhm @ 1.8A, 13V
Vgs(th) (max) at Id 3.5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 15 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 342 pF @ 100 V
FET Function -
Power Dissipation (Max) 27.2W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-FP
Package/Case TO-220-3 Full Package
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