IPA80R650CEXKSA1 Infineon | Infineon agency

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Mfr. #：

IPA80R650CEXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 800 V 4.5A (Tc) 33W (Tc) PG-TO220-FP

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? CE
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	800 V
Current at 25°C - Continuous Drain (Id)	4.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	650 mOhm @ 5.1A, 10V
Vgs(th) (max) at Id	3.9V @ 470μA
Gate Charge?(Qg) (max) at Vgs	45 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	1100 pF @ 100 V
FET Function	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package/Case	TO-220-3 Full Package

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