IPP80N04S2H4AKSA2 Infineon | Infineon agency

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Mfr. #：

IPP80N04S2H4AKSA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 40 V 80A (Tc) 300W (Tc) PG-TO220-3-1

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	4 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	4 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	148 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	4400 pF @ 25 V
FET Function	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package/Case	TO-220-3

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