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IPP014N06NF2SAKMA1 Image

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Mfr. #:
IPP014N06NF2SAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 39A (Ta), 198A (Tc) 3.8W (Ta), 300W (Tc) PG-TO220-3-U05
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series StrongIRFET?2
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 39 A (Ta), 198 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 1.4 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 3.3 V @ 246 μA
Gate Charge?(Qg) (max) at Vgs 305 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 13800 pF @ 30 V
FET function -
Power dissipation (max) 3.8W (Ta), 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3-U05
Package/case TO-220-3
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