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BFP 840ESD H6327 Image

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Mfr. #:
BFP 840ESD H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2720
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type -
Collector-emitter breakdown voltage (Vceo) 2.25V
Collector current (Ic) 35mA
Power (Pd) 75mW
Collector cutoff current (Icbo) 400nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) -
DC current gain (hFE@Ic,Vce) 260@10mA,1.8V
Characteristic frequency (fT) 80GHz
Operating temperature 150℃@(Tj)
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