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BFP410H6327 Image

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Mfr. #:
BFP410H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2657
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Vceo) 4.5V
Collector Current (Ic) 40mA
Power (Pd) 150mW
Collector Cutoff Current (Icbo) 1nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
DC Current Gain (hFE@Ic,Vce) 95@13mA,2V
Characteristic Frequency (fT) 25GHz
Operating Temperature 150℃@(Tj)
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