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BFP650H6327 Image

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Mfr. #:
BFP650H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
RF transistor NPN
Datasheet:
In Stock:
124355
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Vceo) 4V
Collector Current (Ic) 150mA
Power (Pd) 500mW
Collector Cutoff Current (Icbo) 1nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
DC Current Gain (hFE@Ic,Vce) 170@70mA,3V
Characteristic Frequency (fT) 42GHz
Operating Temperature 150℃@(Tj)
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