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BFN 39 H6327 Image

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Mfr. #:
BFN 39 H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type -
Collector-Emitter Breakdown Voltage (Vceo) 300V
Collector Current (Ic) 200mA
Power (Pd) 1.5W
Collector Cutoff Current (Icbo) 100nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@20mA,2mA
DC Current Gain (hFE@Ic,Vce) 25@1mA,10V
Characteristic Frequency (fT) 100MHz
Operating Temperature 150℃@(Tj)
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