LOGO
LOGO
BFP540H6327 Image

img for reference only

Mfr. #:
BFP540H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
RF transistors
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Vceo) 4.5V
Collector Current (Ic) 80mA
Power (Pd) 250mW
Collector Cutoff Current (Icbo) 100nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
DC Current Gain (hFE@Ic,Vce) 110@20mA,3.5V
Characteristic Frequency (fT) 30GHz
Operating Temperature 150℃@(Tj)
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd