IRFSL7734PBF Infineon | Infineon agency

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Mfr. #：

IRFSL7734PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 75 V 183A (Tc) 290W (Tc) TO-262

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?, StrongIRFET?
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	75 V
Current at 25°C - Continuous Drain (Id)	183A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	3.5 milliohms @ 100A, 10V
Vgs(th) (max) at Id	3.7V @ 250μA
Gate Charge?(Qg) (max) at Vgs	270 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	10150 pF @ 25 V
FET function	-
Power dissipation (max)	290W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	TO-262
Package/case	TO-262-3, long lead, I2Pak, TO-262AA

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