IRLMS2002GTRPBF Infineon | Infineon agency

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Mfr. #：

IRLMS2002GTRPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 20 V 6.5A (Ta) 2W (Ta) Micro6? (SOT23-6)

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	20 V
Current at 25°C - Continuous Drain (Id)	6.5A (Ta)
Drive Voltage (Rds On Max, Rds On Min)	2.5V, 4.5V
On-Resistance (max) at Id, Vgs	30 milliohms @ 6.5A, 4.5V
Vgs(th) (max) at Id	1.2V @ 250μA
Gate Charge?(Qg) (max) at Vgs	22 nC @ 5 V
Vgs (max)	±12V
Input capacitance (Ciss) (max)	1310 pF @ 15 V
FET function	-
Power dissipation (max)	2W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	Micro6? (SOT23-6)
Package/case	SOT-23-6

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