AUIRF5210S Infineon | Infineon agency

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Mfr. #：

AUIRF5210S

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) D2PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	38A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	60 milliohms @ 38A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	230 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	2780 pF @ 25 V
FET Function	-
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

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