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IPD65R950CFDBTMA1 Image

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Mfr. #:
IPD65R950CFDBTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 3.9A (Tc) 36.7W (Tc) PG-TO252-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 3.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 950 mOhm @ 1.5A, 10V
Vgs(th) (max) at Id 4.5V @ 200μA
Gate Charge?(Qg) (max) at Vgs 14.1 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 380 pF @ 100 V
FET function -
Power dissipation (max) 36.7W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3
Package/case TO-252-3, DPak (2-lead tab), SC-63
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