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IPI65R099C6XKSA1 Image

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Mfr. #:
IPI65R099C6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 38A (Tc) 278W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 38 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 99 mOhm @ 12.8 A, 10 V
Vgs(th) (max) at Id 3.5 V @ 1.2 mA
Gate Charge?(Qg) (max) at Vgs 127 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 2780 pF @ 100 V
FET Function -
Power Dissipation (max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package/Case TO-262-3, Long Lead, I2Pak, TO-262AA
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