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AUIRFS6535 Image

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Mfr. #:
AUIRFS6535
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 300 V 19A (Tc) 210W (Tc) PG-TO263-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 300 V
Current at 25°C - Continuous Drain (Id) 19A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 185 mOhm @ 11A, 10V
Vgs(th) (max) at Id 5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 57 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 2340 pF @ 25 V
FET Function -
Power Dissipation (max) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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