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IPI020N06NAKSA1 Image

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Mfr. #:
IPI020N06NAKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) PG-TO262-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Bulk
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 29 A (Ta), 120 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 2 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 2.8 V @ 143 μA
Gate Charge?(Qg) (max) at Vgs 106 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 7800 pF @ 30 V
FET function -
Power dissipation (max) 3W (Ta), 214W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO262-3-1
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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