AUIRF9Z34N Infineon | Infineon agency

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Mfr. #：

AUIRF9Z34N

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole P channel 55 V 19A (Tc) 68W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, HEXFET?
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	55 V
Current at 25°C - Continuous Drain (Id)	19A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	100 milliohms @ 10A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	35 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	620 pF @ 25 V
FET function	-
Power dissipation (max)	68W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	TO-220AB
Package/case	TO-220-3

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