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IPP50R500CEXKSA1 Image

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Mfr. #:
IPP50R500CEXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 500 V 7.6A (Tc) PG-TO220-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 7.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 13V
On-Resistance (max) at Id, Vgs 500 mOhm @ 2.3A, 13V
Vgs(th) (max) at Id 3.5V @ 200μA
Gate Charge?(Qg) (max) at Vgs 18.7 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 433 pF @ 100 V
FET Function Superjunction
Power Dissipation (max) -
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
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