LOGO
LOGO
IDB30E60 Image

img for reference only

Mfr. #:
IDB30E60
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Switching diode
Diode configuration Standalone
Power 142.9W
DC reverse withstand voltage (Vr) 600V
Average rectified current (Io) 52.3A
Forward voltage drop (Vf) 2V@30A
Reverse current (Ir) 50uA@600V
Reverse recovery time (trr) 126ns
Operating temperature -40℃~ 175℃@(Tj)
Related models
  • IPW60R160P6FKSA1

    N-Channel 600 V 23.8 A 160 mΩ 44 nC CoolMOS P6 Power Transistor - TO-247

  • IPW60R180P7XKSA1

    Single N-Channel 600 V 180 mOhm 25 nC CoolMOS? Power Mosfet - TO-247-3

  • IPW60R190P6FKSA1

    N-Channel 600 V 20.2 A 190 mΩ 37 nC CoolMOS P6 Power Transistor - TO-247

  • IPW60R017C7XKSA1

    Single N-Channel 600 V 17 mOhm 240 nC CoolMOS? Power Mosfet - TO-247-3

  • IPW60R018CFD7XKSA1

    MOSFET N CH

  • IPW60R037P7XKSA1

    Single N-Channel 600V 37 mOhm 121 nC CoolMOS? Power Mosfet - TO-247-3

  • IPW60R040C7XKSA1

    IPW60R040C7 Series 600 V 50 A CoolMOS? C7 Power Transistor - PG-TO-247-3

  • IPW60R041P6FKSA1

    IPW60R041P6 Series 600 V 77.5 A CoolMOS? P6 Power Transistor - TO-247-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd