IPB023N04NGATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB023N04NGATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 40 V 90A (Tc) 167W (Tc) PG-TO263-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	OptiMOS?
	Tape and Reel (TR)
	Discontinued
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	90 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	2.3 mOhm @ 90 A, 10 V
Vgs(th) (max) at Id	4 V @ 95 μA
Gate Charge?(Qg) (max) at Vgs	120 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	10000 pF @ 20 V
FET Function	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB
	IPB023N

CY7C1480BV33-200AXC

IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC
CY7C1480BV33-250BZI

IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 250MHz
CY7C1480V33-167AXC

IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC
CY7C1481BV33-133AXI

IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C; 133MHz
CY7C1512KV18-250BZC

IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; 0÷70°C; 1.7÷1.9VDC
CY7C1512KV18-250BZI

IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC
CY7C1514KV18-250BZI

IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC
CY7C1515KV18-300BZI

IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC