IPB230N06L3GATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB230N06L3GATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 60 V 30A (Tc) 36W (Tc) PG-TO263-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	60 V
Current at 25°C - Continuous Drain (Id)	30 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	23 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id	2.2 V @ 11 μA
Gate Charge?(Qg) (max) at Vgs	10 nC @ 4.5 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	1600 pF @ 30 V
FET Function	-
Power Dissipation (max)	36W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

IRFS3107TRL7PP

IRFS3107 Series 75 V 2.6 mOhm Surface Mount HEXFET Power MOSFET - TO-263-7
IRFS3107TRLPBF

Single N-Channel 75 V 3 mOhm 240 nC HEXFET? Power Mosfet - D2PAK
IRFS3206TRRPBF

Single N-Channel 60 V 300 W 120 nC Power Mosfet Surface Mount - D2PAK-3
IRFS3207TRLPBF

Single N-Channel 75 V 300 W 180 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
IRFS3306TRLPBF

Single N-Channel 60 V 230 W 85 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
IRFS3307ZTRRPBF

N-Channel 75V 5.8mΩ 79nC SMT HEXFET Power Mosfet - D2PAK
IRFS3607TRLPBF

Single N-Channel 75 V 9 mOhm 84 nC 140 W Silicon SMT Mosfet - TO-263-3
IRFS4010TRL7PP

Single N-Channel 100 V 4 mOhm 230 nC HEXFET? Power Mosfet - D2PAK