IPB60R600C6ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB60R600C6ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 600 V 7.3A (Tc) 63W (Tc) PG-TO263-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	7.3A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	600 mOhm @ 2.4A, 10V
Vgs(th) (max) at Id	3.5V @ 200μA
Gate Charge?(Qg) (max) at Vgs	20.5 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	440 pF @ 100 V
FET function	-
Power dissipation (max)	63W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO263-3
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

IPW60R160P6FKSA1

N-Channel 600 V 23.8 A 160 mΩ 44 nC CoolMOS P6 Power Transistor - TO-247
IPW60R180P7XKSA1

Single N-Channel 600 V 180 mOhm 25 nC CoolMOS? Power Mosfet - TO-247-3
IPW60R190P6FKSA1

N-Channel 600 V 20.2 A 190 mΩ 37 nC CoolMOS P6 Power Transistor - TO-247
IPW60R017C7XKSA1

Single N-Channel 600 V 17 mOhm 240 nC CoolMOS? Power Mosfet - TO-247-3
IPW60R018CFD7XKSA1

MOSFET N CH
IPW60R037P7XKSA1

Single N-Channel 600V 37 mOhm 121 nC CoolMOS? Power Mosfet - TO-247-3
IPW60R040C7XKSA1

IPW60R040C7 Series 600 V 50 A CoolMOS? C7 Power Transistor - PG-TO-247-3
IPW60R041P6FKSA1

IPW60R041P6 Series 600 V 77.5 A CoolMOS? P6 Power Transistor - TO-247-3