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IRFR812PBF Image

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Mfr. #:
IRFR812PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 500 V 3.6A (Tc) 78W (Tc) D-Pak
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 3.6A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 2.2 ohms @ 2.2A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 810 pF @ 25 V
FET Function -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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