LOGO
LOGO
BSC205N10LS G Image

img for reference only

Mfr. #:
BSC205N10LS G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 7.4A (Ta), 45A (Tc) 76W (Tc) PG-TDSON-8-1
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Tape and Reel (TR)
Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 7.4A (Ta), 45A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 20.5 mOhm @ 45A, 10V
Vgs(th) (max) at Id 2.4V @ 43μA
Gate Charge?(Qg) (max) at Vgs 41 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2900 pF @ 50 V
FET function -
Power dissipation (max) 76W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TDSON-8-1
Package/case 8-PowerTDFN
Related models
  • IPP90R1K2C3XKSA1

    Power MOSFET, N-Channel, 900 V, 5.1 A, 0.94 ohm, TO-220, Through Hole

  • AUIRFS3206

    Power MOSFET, N-Channel, 60 V, 120 A, 0.0024 ohm, TO-263AB, Surface Mount

  • IRLR3802PBF

    Power MOSFET, N-Channel, 12 V, 84 A, 0.0085 ohm, TO-252 (DPAK), Surface Mount

  • IRFB42N20DPBF

    Power MOSFET, N-channel, 200 V, 42.6 A, 0.055 ohm, TO-220AB, Through Hole

  • AUIRFS4410Z

    Power MOSFET, N-Channel, 100 V, 97 A, 0.0072 ohm, TO-263AB, Surface Mount

  • IRF7506TRPBF

    Dual MOSFET, P-Channel, 30 V, 1.7 A, 0.27 ohm, μSOIC, Surface Mount

  • IPB009N03LGATMA1

    Power MOSFET, N-channel, 30 V, 180 A, 700 μohm, TO-263 (D2PAK), Surface mount

  • IRL2203NPBF

    Power MOSFET, N-Channel, 30 V, 100 A, 0.007 ohm, TO-220AB, Through Hole

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd