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IRF6898MTR1PBF Image

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Mfr. #:
IRF6898MTR1PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 25 V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) DIRECTFET? MX
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 35A (Ta), 213A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.1 milliohms @ 35A, 10V
Vgs(th) (max) at Id 2.1V @ 100μA
Gate Charge?(Qg) (max) at Vgs 62 nC @ 4.5 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 5435 pF @ 13 V
FET function Schottky diode (body)
Power dissipation (max) 2.1W (Ta), 78W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package DIRECTFET? MX
Package/case DirectFET? Isocapacitive MX
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