LOGO
LOGO
BSP299L6327HUSA1 Image

img for reference only

Mfr. #:
BSP299L6327HUSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 500 V 400mA (Ta) 1.8W (Ta) PG-SOT223-4-21
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
SIPMOS?
Tape and Reel (TR)
Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 500 V
Current at 25°C - Continuous Drain (Id) 400 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) for different Id, Vgs 4 Ohm @ 400 mA, 10 V
Vgs(th) (max) for different Id 4 V @ 1 mA
Vgs (max) ±20 V
Input Capacitance (Ciss) (max) for different Vds 400 pF @ 25 V
FET Function -
Power dissipation (max) 1.8W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount type
Supplier device package PG-SOT223-4-21
Package/case TO-261-4, TO-261AA
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd