LOGO
LOGO
ISP650P06NM Image

img for reference only

Mfr. #:
ISP650P06NM
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
322
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type P Channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 3.7A
Power (Pd) 4.2W
On-resistance (RDS(on)@Vgs,Id) 54mΩ@10V,3.7A
Threshold Voltage (Vgs(th)@Id) 3V@1.037mA
Gate Charge (Qg@Vgs) 39nC@10V
Input Capacitance (Ciss@Vds) 1.6nF@30V
Reverse Transfer Capacitance (Crss@Vds) 54pF@30V
Operating Temperature -55℃~ 150℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd