LOGO
LOGO
IRFH5250DTRPBF Image

img for reference only

Mfr. #:
IRFH5250DTRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
4
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type -
Drain-Source Voltage (Vdss) -
Continuous Drain Current (Id) -
Power (Pd) -
On-Resistance (RDS(on)@Vgs,Id) -
Threshold Voltage (Vgs(th)@Id) -
Gate Charge (Qg@Vgs) -
Input Capacitance (Ciss@Vds) -
Reverse Transfer Capacitance (Crss@Vds) -
Related models
  • IRF7907TRPBF

    Dual MOSFET, N-channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm

  • IRFR1018ETRPBF

    Power MOSFET, N-Channel, 60 V, 79 A, ​​0.0071 ohm, TO-252AA, Surface Mount

  • BSL308CH6327XTSA1

    Dual MOSFET, Complementary N and P channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

  • IRFH7932TRPBF

    Power MOSFET, HEXFET?, N-Channel, 30 V, 25 A, 0.0025 ohm, QFN, Surface Mount

  • IRF3808STRLPBF

    Power MOSFET, N-Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount

  • IPD60R400CEAUMA1

    Power MOSFET, N-channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPU60R2K1CEAKMA1

    Power MOSFET, N-channel, 600 V, 3.7 A, 1.8 ohm, TO-251, Through Hole

  • IPB60R120P7ATMA1

    Power MOSFET, N-Channel, 600 V, 26 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd