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IPW65R190C6FKSA1 Image

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Mfr. #:
IPW65R190C6FKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 20.2A (Tc) 151W (Tc) PG-TO247-3-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
CoolMOS?
Fittings
Discontinued
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 20.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (max) at Id 3.5V @ 730μA
Gate Charge?(Qg) (max) at Vgs 73 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1620 pF @ 100 V
FET function -
Power dissipation (max) 151W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3-1
Package/case TO-247-3
IPW65R
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