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IPB45N04S4L08ATMA1 Image

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Mfr. #:
IPB45N04S4L08ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 40 V 45A (Tc) 45W (Tc) PG-TO263-3-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Tape and Reel (TR)
Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 45 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 7.6 mOhm @ 45 A, 10 V
Vgs(th) (max) at Id 2.2 V @ 17 μA
Gate Charge?(Qg) (max) at Vgs 30 nC @ 10 V
Vgs (max) 20V, -16V
Input capacitance (Ciss) (max) at different Vds 2340 pF @ 25 V
FET function -
Power dissipation (max) 45W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3-2
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
IPB45N
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