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IPD100N06S403ATMA1 Image

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Mfr. #:
IPD100N06S403ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 60 V 100A (Tc) 150W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Tape and Reel (TR)
Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 3.5 mOhm @ 100A, 10V
Vgs(th) (max) at Id 4V @ 90μA
Gate Charge?(Qg) (max) at Vgs 128 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 10400 pF @ 25 V
FET function -
Power dissipation (max) 150W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-11
Package/case TO-252-3, DPak (2-lead tab), SC-63
IPD100N
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