BUZ73ALHXKSA1 Infineon | Infineon agency

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Mfr. #：

BUZ73ALHXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 200 V 5.5A (Tc) 40W (Tc) PG-TO220-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	SIPMOS?
	Fittings
	Discontinued
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	5.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	5V
On-Resistance (max) at Id, Vgs	600 mOhm @ 3.5A, 5V
Vgs(th) (max) at Id	2V @ 1mA
Vgs (max)	±20V
Input Capacitance (Ciss) (max) at Vds	840 pF @ 25 V
FET Function	-
Power dissipation (max)	40W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier Device package	PG-TO220-3
Package/case	TO-220-3

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