BUZ73LHXKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

BUZ73LHXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 200 V 7A (Tc) 40W (Tc) PG-TO220-3

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	SIPMOS?
	Fittings
	Discontinued
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	7A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	5V
On-Resistance (max) for different Id, Vgs	400 mOhm @ 3.5A, 5V
Vgs(th) (max) for different Id	2V @ 1mA
Vgs (max)	±20V
Input Capacitance (Ciss) (max) for different Vds	840 pF @ 25 V
FET Function	-
Power dissipation (max)	40W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier Device package	PG-TO220-3
Package/case	TO-220-3

IQE006NE2LM5ATMA1

Power MOSFET, N-Channel, 25 V, 298 A, 0.0005 ohm, TSON, Surface Mount
IPD050N10N5ATMA1

Power MOSFET, N-Channel, 100 V, 80 A, 0.0043 ohm, TO-252 (DPAK), Surface Mount
IMZA65R072M1HXKSA1

Silicon Carbide MOSFET, SiC Trench, Single, N-Channel, 28 A, 650 V, 0.072 ohm, TO-247
IPAN60R360PFD7SXKSA1

Power MOSFET, N-Channel, 600 V, 10 A, 0.303 ohm, TO-220FP, Through Hole
IMZA65R107M1HXKSA1

SiC MOSFET, Single, N-Channel, 20 A, 650 V, 0.107 ohm, TO-247
IPP039N10N5AKSA1

Power MOSFET, N-channel, 100 V, 100 A, 0.0032 ohm, TO-220, Through Hole
IPD60R360CFD7ATMA1

Power MOSFET, N-Channel, 600 V, 7 A, 0.295 ohm, TO-252 (DPAK), Surface Mount
IPC100N04S5L1R5ATMA1

Power MOSFET, N-Channel, 40 V, 100 A, 0.0012 ohm, TDSON, SMT