LOGO
LOGO
IPA65R190C6XKSA1 Image

img for reference only

Mfr. #:
IPA65R190C6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 20.2A (Tc) 34W (Tc) PG-TO220-3-111
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 20.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 190 mOhm @ 7.3A, 10V
Vgs(th) (max) at Id 3.5V @ 730μA
Gate Charge?(Qg) (max) at Vgs 73 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 1620 pF @ 100 V
FET Function -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package/Case TO-220-3 Full Package
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd