AUIRF2907Z Infineon | Infineon agency

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Mfr. #：

AUIRF2907Z

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 75 V 75A (Tc) 300W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	75 V
Current at 25°C - Continuous Drain (Id)	75 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	4.5 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id	4 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	270 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	7500 pF @ 25 V
FET Function	-
Power Dissipation (max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

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