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AUIRFSL4310 Image

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Mfr. #:
AUIRFSL4310
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 100 V 75A (Tc) 300W (Tc) TO-262
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 75A (Tc)
On-Resistance (max) at Id, Vgs 7 milliohms @ 75A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 250 nC @ 10 V
Input Capacitance (Ciss) (max) at Vds 7670 pF @ 50 V
FET Function -
Power dissipation (max) 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-262
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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