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IPD60R3K3C6ATMA1 Image

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Mfr. #:
IPD60R3K3C6ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
7
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 600V
Continuous Drain Current (Id) 1.7A
Power (Pd) 18.1W
On-resistance (RDS(on)@Vgs,Id) 3.3Ω@500mA,10V
Threshold Voltage (Vgs(th)@Id) 3.5V@40uA
Gate Charge (Qg@Vgs) 4.6nC@10V
Input Capacitance (Ciss@Vds) 93pF@100V
Operating Temperature -55℃~ 150℃@(Tj)
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