AUIRL1404ZL Infineon | Infineon agency

img for reference only

Mfr. #：

AUIRL1404ZL

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 40 V 160A (Tc) 200W (Tc) TO-262

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	160A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	3.1 milliohms @ 75A, 10V
Vgs(th) (max) at Id	2.7V @ 250μA
Gate Charge?(Qg) (max) at Vgs	110 nC @ 5 V
Vgs (max)	±16V
Various Vds Input Capacitance (Ciss) (max)	5080 pF @ 25 V
FET Function	-
Power Dissipation (max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package/Case	TO-262-3, Long Lead, I2Pak, TO-262AA

CY14E256Q5A-SXQ

IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; Serial; 4.5÷5.5VDC
CY14MB064Q2A-SXQ

IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 2.7÷3.6VDC
CY14MB064Q2A-SXQT

IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 2.7÷3.6VDC
CY14ME064J2-SXQT

IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 4.5÷5.5VDC
CY14V101LA-BA25XIT

IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel; -40÷85°C
CY14V101NA-BA25XI

IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel; -40÷85°C
CY14V101NA-BA25XIT

IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel; -40÷85°C
CY14V101QS-BK108XI

IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; Serial; 108MHz