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IPI086N10N3 G Image

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Mfr. #:
IPI086N10N3 G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
15
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 80A
Power (Pd) 125W
On-resistance (RDS(on)@Vgs,Id) 7.2mΩ@10V,73A
Threshold Voltage (Vgs(th)@Id) 2.7V@75mA
Gate Charge (Qg@Vgs) 42nC@10V
Input Capacitance (Ciss@Vds) 2.99nF@50V
Reverse Transfer Capacitance (Crss@Vds) 21pF@50V
Operating Temperature -55℃~ 175℃@(Tj)
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