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IPD096N08N3GATMA1 Image

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Mfr. #:
IPD096N08N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
13
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type N-channel
Drain Source Voltage (Vdss) 80V
Continuous Drain Current (Id) 73A
Power (Pd) 100W
On-resistance (RDS(on)@Vgs,Id) 9.6mΩ@46A,10V
Threshold Voltage (Vgs(th)@Id) 3.5V@46uA
Gate Charge (Qg@Vgs) 35nC@10V
Input Capacitance (Ciss@Vds) 2.41nF@40V
Operating Temperature -55℃~ 175℃@(Tj)
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